姓名：丁召 工作单位：贵州大学理学院 电子科学系 地址： 贵州省贵阳市花溪区 贵州大学北区 邮编： 550025 研究范围： 研究砷化镓表面形貌对于极化自旋的电子注入效率的影响； 研究磷化铟表面各种重构相； 以二维艾辛模型为指导，研究砷化镓（001）表面自发形成的岛状结构在平衡态下随砷蒸汽压力和温度的演变；研究砷化镓（001）表面自发形成的岛状结构产生过程的动态演变； 在原子尺度上观察由温度和砷蒸汽压力驱动的砷化镓（001）表面预粗化和粗化过程； 研究砷化镓（001）表面镓原子的表面扩散； 研究砷化镓（001）表面自发形成的岛状结构的微观结构； 参与构建了分子束外延生长设备与扫描隧道显微镜联合系统。解决了系统联合中的兼容问题 参与构建了霍耳效应测量系统，测量分子束生长样品的输运特性 参与构建了霍耳效应测量系统，研究氧原子在硅晶片中因热处理而形成的新热施主 研究铟镓砷在砷化镓表面的生长，粗糙化的静态及动态过程。
学历： University of Arkansas Fayetteville, Arkansas U. S. A. 物理学博士， 1998年8月－2002年8月 导师：Paul M. Thibado University of Arkansas Fayetteville, Arkansas U. S. A. 应用物理硕士，1998年8月－2001年5月 导师：Paul M. Thibado 武汉大学 中国 武汉 物理学硕士， 1987年8月－1990年8月 导师：熊传铭 武汉大学 中国 武汉 理学士， 1981年月－1985年8月 工作经历： 博士后研究助理：2002年8月－2005年8月，Department of Physics, University of Arkansas, Fayetteville, Arkansas, U. S. A. 指导教授：Paul M. Thibado 博士生：1998年8月－2002年8月，Department of Physics, University of Arkansas, Fayetteville, Arkansas, U. S. A. 指导教授：Paul M. Thibado 硕士生：1998年8月－2001年5月，Department of Physics, University of Arkansas, Fayetteville, Arkansas, U. S. A. 指导教授：Paul M. Thibado 访问学者：1997年9月－1998年5月，Department of Physics, University of Arkansas, Fayetteville, Arkansas, U. S. A. 指导教授：Paul M. Thibado 硕士生：1987年8月－1990年8月，武汉大学物理系 指导教授：熊传铭 教师：贵州大学，1985年－1987年 讲师：贵州大学，1990年－1997年 教授：贵州大学，2003年－
贵州省省管专家，2007年 贵州大学学科学术带头人，2011年 获奖： “半导体器件原理课程教学改革的探讨与实践” 贵州省第五届高等教育教学成果奖一等奖，傅兴华，丁召，杨建，罗援
研究项目：
1. 高精度低漂移集成电压基准源研究与试制，贵州省科技厅工业攻关项目，黔科合GY字[2008]3033， 项目经费 15万元。
2. InGaAs表面相变过程的MBE/STM研究，国家自然科学基金，60866001，项目经费 31万元。
3. InGaAs表面粗糙化过程的研究，贵州省留学人员科技项目，黔人项目资助，合同 （2007）03号， 项目经费 18万元。
4. GaAs表面相变过程的MBE/STM研究，贵州省科技厅基金，黔科合J字[2007]2176号，项目经费 3万元。
5. GaAs表面预粗糙化与粗糙化过程的研究，贵州省委组织部高层人才科研特助项目，TZJF-2006年10号，项目经费 5万元。
6. 间歇式源中断方式生长InGaAs量子点的表面形貌研究，教育部博士点基金，20105201110003，项目经费 6万元。
7. 电子元器件产学研基地，贵州省教育厅，黔教合KY字【2012】029号，项目经费10万元。
发表文章：
1. 罗子江, 周勋, 王继红, 郭祥, 张毕禅, 周清, 刘珂, 丁召, InGaAs薄膜表面的粗糙化过程, 物理学报, Vol.62 36802 (2013). (SCI收录)
2. Luo Zi-Jiang, Zhou Xun, Wang Ji-Hong, Guo Xiang, Zhou Qing, Liu Ke, Hu Ming-Zhe, Ding Zhao, C(4×4) reconstruction on arsenic-rich GaAs(001) surface after phase transition, Advanced Materials Research,Vol.669 19-23 (2013), (EI收录)
3. 王继红，罗子江，周勋，张毕禅，郭祥, 丁召，InAs薄膜的MBE生长与STM表面形貌及表面重构分析， 材料导报，Vol.27 90-92 (2013)
4. 王继红, 罗子江, 周勋, 郭祥, 周清, 刘珂, 丁召, MBE生长GaAs(001)薄膜表面的Ostwald熟化过程研究, 功能材料, Vol.44 847-853 (2013). (EI收录)
5. Liu Ke, Zhou Xun, Guo Xiang, Luo Zi-Jiang, Wang Ji-Hong, Hu Ming-Zhe, Ding Zhao, Ripening of single-layer InGaAs islands on GaAs(001), Chin. Phys. B, Vol.22 26801-026801 (2013). (SCI收录)
6. 周清，刘珂，罗子江，郭祥，周勋，丁召，MBE生长InGaAs/GaAs(001)多层矩阵式量子点, 功能材料, Vol.44 1128-1131 (2013). (EI收录)
7. Q. Zhou, Z. Luo, K. Liu, X. Guo, B. Zhang, X. Zhou, J. Wang, Z. Ding, Influence of GaAs(001) pregrowth surface morphology and reconstruction on the growth of InGaAs layers, Applied Surface Science, Vol.268 151-155 (2013). (SCI收录)
8. Zhou Xun(周勋), Luo Zi-Jiang(罗子江), Guo Xiang(郭祥),Zhang Bi-Chan(张毕禅), Shang Lin-Tao(尚林涛), Zhou Qing(周清),Deng Chao-Yong(邓朝勇), and Ding Zhao(丁召)，Surface segregation of InGaAs films by the evolution of reflection high-energy electron diffraction patterns，Chin. Phys. B Vol. 21, 046103 (2012)。(SCI收录)
9. Zhang Bi-Chan(张毕禅), Zhou Xun(周勋)，Luo Zi-Jiang(罗子江)，Guo Xiang(郭祥), and Ding Zhao(丁召), Step instability of the In0.2Ga0.8As surface during annealing, Chin. Phys. B Vol. 21(4), 048101 (2012)。(SCI收录)
10. 尚林涛，罗子江，周 勋， 郭 祥，张毕禅，何 浩, 贺业全，丁 召， In0.14Ga0.86As/GaAs(4×3) 表面的RHEED及STM分析。真空科学与技术学报，Vol.32(3), 256 (2012)。(EI收录)
11. 尚林涛，罗子江，周勋，张毕禅，郭祥，丁召，InGaAs(001)表面金属化的转变，材料导报，Vol.26.No.6 101 2012，(EI收录)
12. 罗子江，周勋，贺业全，何浩，郭祥，张毕禅，邓朝勇，丁召，RHEED实时监控下MBE生长不同In组分的InGaAs薄膜，功能材料，Vol.42, 2107 (2011)。(EI收录)
13. 罗子江，周勋，杨再荣，贺业全，何浩，邓朝勇，丁召， InGaAs/GaAs异质薄膜的MBE生长研究，功能材料，Vol.42 846 (2011)。(EI收录)
14. 周勋，杨再荣，罗子江，贺业全，何浩，韦俊，邓朝勇，丁召，反射式高能电子衍射仪实时监控的分子束外延生长GaAs晶体衬底温度校准及表面相变的研究，物理学报，Vol. 60 016109 (2011)。(SCI收录)
15. 郭祥，罗子江，张毕禅，尚林涛，周勋，邓朝勇，丁召，一种测定GaAs上InAs生长速率的方法。物理实验，Vol.31(No.1) 11 (2011)。(核心期刊)
16. 何浩，贺业全，杨再荣，罗子江，周勋，丁召，自组织InAs/GaAs与InGaAs/GaAs量子点生长及退火情况的比较，真空，Vol.48 82 (2011)。(核心期刊)
17. 罗子江，周勋，杨再荣，贺业全，何浩，邓朝勇，丁召，在RHEED实时监控下GaAs晶体生长研究，功能材料 Vol. 41 704 (2010)。(EI收录)
18. 贺业全，罗子江，杨再荣，何浩，邓朝勇，周勋，丁召，不同Ⅴ/Ⅲ束流比对GaAs(001)面重构相的影响，真空，Vol. 47 70 (2010)。(核心期刊)
19. 杨发顺，林洁馨，马奎，丁召，傅兴华，汽车电压调节器集成电路芯片版图设计，半导体技术，Vol. 34(9), 930 (2009)
20. 杨发顺，林洁馨，马奎，丁召，傅兴华，一种大电流高精度集成汽车电压调节器，微电子学，Vol. 39(4), 491 (2009)
21. 马奎，丁召，吴宗桂，邓爱枝，傅兴华，高性能CMOS集成电压比较器设计，现代电子技术，Vol. 32(14), 7 (2009)
22. 崔英善; 丁召; 张正平; 陆安江，砷化镓表面RHEED图谱的LabView设计，微计算机信息，Vol.25(9) 99 (2009)
23. 黄旭，潘金福，王云，周勋，丁召，MBE系统中GaAs样品的RHEED分析，现代机械，2009年第3期，第77页
24. 邓朝勇，周勋，马凯英，张正平，丁召，傅兴华，高浓度激活剂掺杂钡镁铝酸盐的发光特性研究，中国稀土学报，Vol. 27(2)，194 (2009)
25. 周洪练，冯发文，任社华，丁召，R-500B型X线机电源自动调压电路的改进,中国医疗设备，Vol. 24(1)，1 (2009)
26. 杨再荣，潘金福，周勋，王基石，宁江华，丁召，用于MBE中的反射式高能电子衍射仪，现代机械，2009年第1期，第57页
27. 王云，潘金福，黄旭，丁召，MBE系统中砷蒸气压的校准，中国科技信息，2008年第23期，第147页
28. 潘金福; 王云; 黄旭; 丁召，低温扫描隧道显微镜(LT-STM)的调试技术，真空，Vol.46(3) 57(2009) (核心期刊)
29. 潘金福，黄旭，王云，丁召，STM探针电化学腐蚀装置的设计及实验研究，现代机械，2008年第5期，第14页
30. J. Yang, S. Wang, F.S. Yang, Z.P. Zhang, Z. Ding and X.H. Fu, In-situ growth of superconducting MgB2 thin films by HPCVD method at lower temperature，Physica C 467, 1 (2007)
31. J.F. Xu, P.M. Thibado, Z. Ding, 4 K, ultrahigh vacuum scanning tunneling microscope having two orthogonal tips with tunnel junctions as close as a few nanometers, Rev. Sci. Instrum. 77, 093703 (2006) (SCI收录)
32. V.P. LaBella, M.R. Krause, Z. Ding and P.M. Thibado, Arsenic-rich GaAs(001) Surface Structure, Surf. Sci. Rep. 60, 1 (2005) (SCI收录, 影响因子:17.857)
33. Z. Ding, P. M. Thibado, C. Awo-Affouda, and V. P. LaBella, Electron-beam evaporated cobalt films on molecular beam epitaxy prepared GaAs(001), J. Vac. Sci. Technol. B 22, 2068 (2004). (SCI收录)
34. S. Vezian, F. Semond, J. Massies, D. W. Bullock, Z. Ding and P. M. Thibado, Origins of the GaN(0001) Surface Reconstructions, Surf. Sci. 541, 242 (2003). (SCI收录)
35. Z. Ding, D. W. Bullock, P. M. Thibado, V. P. LaBella, and Kieran Mullen, Time-evolution of the GaAs(001) pre-roughening process, Surf. Sci. 540, 491 (2003). (SCI 收录)
36. Z. Ding, D. W. Bullock, P. M. Thibado, V. P. LaBella, and Kieran Mullen, Atomic-Scale Observation of Temperature and Pressure Driven Preroughening and Roughenin, Phys. Rev. Lett. 90, 216109 (2003). (SCI收录, 影响因子: 7.489)
37. D. W. Bullock,Z. Ding, and P. M. Thibado, V. P. LaBella, Role of Aperiodic Surface Defects on the Intensity of Electron Diffraction Spots, Appl. Phys. Lett. 82, 2586 (2003). (SCI 收录, 影响因子: 4.127)
38. Z. Ding, D. W. Bullock, W. F. Oliver and P. M. Thibado, Dynamics of Spontaneous Roughening on the GaAs (001)-(2 x 4) Surface, J. Cryst. Growth 251, 35 (2003). (SCI收录)
39. D. W. Bullock, V. P. LaBella, Z. Ding, and P. M. Thibado, Simultaneous Surface Topography and Spin-Injection Probability, J. Vac. Sci. Technol. B, 21, 67 (2002). (SCI 收录)
40. D. W. Bullock, V. P. LaBella, Z. Ding, and P. M. Thibado, Mapping the Spin-Injection Probability on the Atomic Scale, J. Supercond. 15, 37 (2002). (SCI收录)
41. D. W. Bullock, V. P. Labella, T. Clingan, Z. Ding, G. Stewart, and P. M. Thibado, Enhancing the Student-Instructor Interaction Frequency, The Physics Teacher, 40, 535 (2002). (SCI 收录)
42. V. P. LaBella, D. W. Bullock, Z. Ding, C. Emery,and P. M. Thibado, Enabling Electron Diffraction as a Tool for Determining Substrate Temperature and Surface Morphology, App. Phys. Lett. 79, 3065 (2001) (SCI收录, 影响因子: 4.12)
43. V. P. LaBella, D. W. Bullock, Z. Ding, C. Emery, A. Venkatesan, M. Mortazavi, W. F. Oliver, G. J. Salamo, and P. M. Thibado, Spatially-Resolved Spin-Injection Probability for Gallium Arsenide, Science 292, 1518 (2001). (SCI收录, 影响因子: 30.927)
44. V. P. LaBella, Z. Ding, D. W. Bullock, C. Emery, and P. M. Thibado, A Union of the Real Space and Reciprocal Space view of the GaAs(001) Surface, Int. J. Mod. Phys. B 15, 2301 (2001). (SCI收录)
45. V. P. LaBella, Z. Ding, D. W. Bullock, C. Emery, and P. M. Thibado, Microscopic Structure of Spontaneously Formed Islands on the GaAs(001)-(2 x 4) Reconstructed Surface, J. Vac. Sci. Technol. B 19, 1640 (2001). (SCI收录)
46. V. P. LaBella, D. W. Bullock, Z. Ding and P. M. Thibado, P. Kratzer and M. Scheffler, A Novel STM Imaging Mechanism is Used to Determine the Atomic Structure of the GaAs(001)-(2 x 4) Surface, Omicron Newsletter 4, 4 (2000).
47. V. P. LaBella, Z. Ding, D. W. Bullock, C. Emery, and P. M. Thibado, Reflection high-energy electron diffraction and scanning tunneling microscopy study of InP(001) surface reconstruction, J. Vac. Sci. Technol. A 18, 1492 (2000). (SCI收录)
48. V. P. LaBella, D. W. Bullock, Z. Ding, C. Emery, W. G. Harter, and P. M. Thibado, Monte-Carlo Derived Diffusion Parameters for Ga on the GaAs(001)-(2 x 4) Surface: An MBE-STM Study, J. Vac. Sci. Technol. A 18, 1526 (2000). (SCI收录, 影响因子: 1.399, 引用次数: 12)
49. V. P. LaBella, D. W. Bullock, M. Anser, Z. Ding, C. Emery, L. Bellaiche, and P. M. Thibado, Microscopic View of a Two-Dimensional Lattice-Gas Ising System within the Grand Canonical Ensemble, Phys. Rev. Lett. 84, 4152 (2000). (SCI收录, 影响因子: 7.489)
50. H. Yang, V. P. LaBella, D. W. Bullock, Z. Ding, J. B. Smathers and P. M. Thibado, Activation Energy for Ga Diffusion on the GaAs(001)-(2 x 4) Surface: An MBE-STM Study, J. Cryst. Growth 201-202, 88 (1999). (SCI收录)
51. J. B. Smathers, D.W. Bullock, Z. Ding, G.J. Salamo and P.M. Thibado, Enabling In Situ Atomic-Scale Characterization of Epitaxial Surfaces and Interfaces, J. Vac. Sci. Technol. B 16, 3112 (1998). (SCI收录)
会议报告：
1. D. W. Bullock, V. P. LaBella, T. Clingan, Z. Ding, and P. M. Thibado, Hyper Interactive Teaching Methods Using Remote Control Technology, The 8th Hot Springs Educational Technology Institute Conference, June 13–14, 2001, Hot Springs, Arkansas.
2. C. Emery, D. W. Bullock, Z. Ding, M. Filipkowski, V. P. LaBella, M. Mortazavi, G. Salamo, and P. M. Thibado, Electron Spin Scattering Across a p-type GaAs(110) Step Using a Ferromagnetic-Metal STM Tip, The 85th Annual Meeting of the Arkansas Academy of Sciences, April 13–14, 2001, Conway, Arkansas.
3. D. W. Bullock, C. Emery, Z. Ding, V. P. LaBella, and P. M. Thibado, Hyper Interactive Teaching Methods Using Remote Control Technology, The 85th Annual Meeting of the Arkansas Academy of Sciences, April 13–14, 2001, Conway, Arkansas.
4. V. P. LaBella, D. W. Bullock, M. Anser, Z. Ding, C. Emery, L. Bellaiche and P. M. Thibado, The Structure of Spontaneous Formed Islands on the GaAs(001)-(2 x 4) Reconstructed Surface, 28th Conference on the Physics and Chemistry of Semiconductor Interfaces, January 7–11, 2001, Lake Buena Vista, Florida.
5. V. P. LaBella, D. W. Bullock, Z. Ding, C. Emery, A. Venkatesan, W. F. Oliver, M. Mortazavi, G. Salamo and P. M. Thibado, Spatially-Resolved Spin-Injection Probabiliy for GaAs using a Half Metallic Ferromagnet, 28th Conference on the Physics and Chemistry of Semiconductor Interfaces, January 7–11, 2001, Lake Buena Vista, Florida.
6. V. P. LaBella, D. W. Bullock, M. Anser, Z. Ding, C. Emery, L. Bellaiche and P. M. Thibado, The GaAs(001)-(2 x 4) Reconstructed Surface and the Ising Model, The 60th Annual Physical Electronics Conference, June 21–23, 2000, Baton Rouge, Louisiana.
7. D. W. Bullock, Z. Ding, C. Emery, M. Filipkowski, V. P. LaBella, M. Mortazavi, G. Salamo and P. M. Thibado, Electron Spin Scattering Across a p-type GaAs(110) Step Using a Ferromagnetic-Metal STM Tip, 2000 Arkansas Space Grant Consortium Meeting, April 14, 2000, Russellville, Arkansas.
8. D. W. Bullock, Z. Ding, C. Emery, M. Filipkowski, V. P. LaBella, M. Mortazavi, G. Salamo and P. M. Thibado, Electron Spin Scattering Across a p-type GaAs(110) Step Using a Ferromagnetic-Metal STM Tip, The 84th Annual Meeting of the Arkansas Academy of Sciences, April 7–8, 2000, Hot Springs, Arkansas.
9. D. W. Bullock, Z. Ding, C. Emery, M. Filipkowsi, V. P. LaBella, M. Mortazavi, G. Salamo and P. M. Thibado, Simultaneous Topography and Electron Spin-Injection Probability Across a p-Type GaAs(110) Step Using a Ferromagnetic-Metal STM Tip, 27th Conference on the Physics and Chemistry of Semiconductor Interfaces, January 16–20, 2000, Salt Lake City, Utah.
10. V. P. LaBella, D. W. Bullock, M. Anser, Z. Ding, C. Emery, L. Bellaiche and P. M. Thibado, Spontaneous Island Formation on the GaAs(001)-(2 x 4) Reconstructed Surface, 27th Conference on the Physics and Chemistry of Semiconductor Interfaces, January 16–20, 2000, Salt Lake City, Utah.
11. Z. Ding, V. P. LaBella, D. W. Bullock, P. M. Thibado, The Surface Reconstructions of InP(001), 46th National Symposium of the American Vacuum Society, October 25–29, 1999 Seattle, Washington.
12. P. M. Thibado, V. P. LaBella, M. Anser, Z. Ding, D. W. Bullock, Spontaneous Island Formation on the GaAs(001)( 2 x 4) Reconstructed Surface, 46th National Symposium of the American Vacuum Society, October 25–29, 1999 Seattle, Washington.
13. D.W. Bullock, V.P. LaBella, Z. Ding, and P.M. Thibado, The Effect of As4 Flux on the Ga Diffusion on the GaAs(001)-(2 x 4) Surface, 46th National Symposium of the American Vacuum Society, October 25–29, 1999 Seattle, Washington
14. Z. Ding, H. Yang, D. W. Bullock, P. Thibado, The Surface Reconstructions of InP, 1999 March Meeting of the American Physical Society, March 20–26, 1999, Atlanta Georgia.
15. P. M. Thibado, H. Yang, V. P. LaBella, D. W. Bullock, Z. Ding, J. B. Smathers, In Situ Study of Ga Diffusion on the GaAs(001)-(2 x 4) Surface Reconstruction, 10 th International Conference on Molecular Beam Epitaxy, August 31 – September 4, 1998, Palais Des Festivals - Cannes, France.
16. Z. Ding, P. M. Thibado and V. P. Labella, E-beam evaporated cobalt films on MBE prepared GaAs(001) for spintronice, PCSI-31st Cneference on The Physics and Chemistry of Semiconductor Interfaces, January 18-22, 2004, Hawaii, U. S. A.
17. “超微粒SnO2薄膜的制备”，1991年全国薄膜科学技术年会，北京
18. “超微粒SnO2薄膜型高灵敏度氢气传感器”，1995年全国传感器学术年会，上海
特邀报告：
Z. Ding, Developing a Spin-Polarized Field-Effect Transistor and Measuring its Performance Characteristics, Nov. 5, 2004; Physics Department, University of Arkansas, Fayetteville, Arkansas, U. S. A.
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